| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| THN5601B |
SiGe NPN Transistor
|
AUK corp
|
| THN4501E THN4501U THN4501Z |
SiGe NPN Transistor
|
AUK corp
|
| THN420Z |
SiGe NPN Transistor
|
AUK corp
|
| THN5601SF |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| NESG2030M04-T2-A NESG2030M04 NESG2030M04-A NESG203 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| BFP650 BFP65010 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| NESG2101M05-T1 NESG2101M05-T1-A NESG2101M05-A |
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
|
Renesas Electronics Corporation
|
